1. On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodesZi-Quan GuoTien-Mo ShihZhang-Bao PengHai-Hua QiuYi-Jun LuYu-Lin GaoLi-Hong ZhuJiang-Hui ZhengZhong ChenAIP Advances20177(1):01537 (SCI: EN1SI/EI: 20170503294627)

2Improvements of mesopic luminance for light-emitting- diode-based outdoor light sources via tuning scotopic/photopic ratiosTingzhu Wu, Yijun Lu, Ziquan Guo, Lili Zheng, Honghui Zhu, Yao Xiao, Tien-Mo Shih, Yue Lin, Zhong Chen, Optics Express2017,255):4887-4897(SCI: EP3ZF) 

3.Efficient Measurement of Thermal Coupling Effects on Multi-chip Light-emitting Diodes, Hong-Li Lu, Yi-Jun Lu, Li-Hong Zhu, Yue Lin, Zi-Quan Guo, Tong Liu, Yu-Lin, Gao, Guo-Long Chen, Zhong Chen, IEEE Transactions on Power Electronics, 2017, 32(12): 9280-9292(SCI:FC4WH)

4.Determining Junction Temperature of LEDs by the Relative Reflected Intensity of the Incident Exciting Light, Yao XiaoTing-Zhu WuSi-Jia DangYu-Lin GaoYue LinLi-Hong ZhuZi-Quan GuoYi-Jun Lu* Zhong Chen, IEEE Transactions on Electron Devices, 2017, 64(5)2257-2260(SCI: ET0EX/EI:20171303500143)

5.Multichannel Online Lifetime Accelerating and Testing System for Power Light-Emitting Diodes, Jing-Jing XiaoZi-Quan GuoYao XiaoYu-Lin GaoLi-Hong ZhuYue LinYi-Jun Lu*Zhong Chen*, IEEE Photonics Journal, 20179(3): 8200911(SCI: ET8DI/EI:20171803620624)

6.Maximum Limits on External Quantum Efficiencies in Bare LEDs, Siqi LinTien-mo ShihWei YanYijun LuYue Lin, Richard Ru-Gin Chang, Zhong Chen, IEEE Transactions on Electron Devices, 201764(4): 1597-1601 (SCI:ER5CG)

7.A Bipolar-Pulse Voltage Method for Junction Temperature Measurement of Alternating Current Light-Emitting Diodes, Honghui Zhu,Yijun LuTingzhu WuZiquan GuoLihong Zhu, Jingjing XiaoYi TuYulin GaoYue LinZhong Chen, IEEE Transactions on Electron Devices, 2017, 64(5): 2326-2329 (SCI: ET0EX

8.Optical Degradation Mechanisms of Indium Gallium Nitride-Based White Light Emitting Diodes by High-Temperature Aging Tests, Yi-Jun Lu, Zi-Quan Guo, Tien-Mo Shih, Yu-Lin Gao, Wei-Lin Huang, Hong-Li Lu, Yue Lin, and Zhong Chen, IEEE Transactions on Reliability, 2016, 65(1): 256-262(SCI: DG8ZC/EI: 20152600967152)

9.Optimization of cooling characteristics in high-voltage LEDsQi YaoTien-Mo Shih*Richard Ru-Gin ChangZhong ChenYu-Lin GaoYi-Jun Lu*Numerical Heat Transfer Part A-Applications2016, 69(11): 1242-1252(SCI: DM9KR/EI: 20161902362232)

10.Non-synchronization of lattice and carrier temperatures in light-emitting diodesJ.H. Zhang, T.M. Shih, Y.J. Lu, H. Merlitz, R.R.G Chang, Z. Chen, Scientific Reports, 2016, 619539 (SCI: DB2SI )

11.A transmission-type testing system for measuring optical characteristics of phosphors for remote-phosphor-based white LEDs, Sijia Dang, Ziquan Guo, Weilin Huang, Yulin Gao, Yijun Lu, Yue Lin, Tienmo Shih, Lihong Zhu, Hongli Lu, Zhong Chen, IEEE Photonics Journal, 2016, 8(1): 6600109 (SCI: DL2QF/EI: 20161502208149)

12.Study on color-tunable phosphor-coated white light-emitting diodes with high S/P ratios, Ziquan Guo, Tienmo Shih, Jingjing Xiao, Hongli Lu, Yijun Lu, Tingzhu Wu, Yue Lin, Yulin Gao, Hua Xiao, Zhong Chen, AIP Advances, 2016, 6(3): 035127 (SCI: DI7MG/EI: 20161602265310)

13.3-D Microlens Phosphor With Curvatures Manufactured by Imprinting for Chip-on-Board Light-Emitting Diodes, Hua Xiao, Tien-Mo Shih, Zi-Quan Guo, Yue Lin, Yi-Jun Lu, Zhong Chen, IEEE Transactions On Electron Devices, 2016, 63(3): 1128-1133 (SCI: DG8TQ/EI: 20160601901232)

14.Blue-emitting Ca-5(PO4)(3)Cl: Eu2+ phosphor for near-UV pumped light emitting diodes: Electronic structures, luminescence properties and LED fabrications, Jianghui Zheng, Shunqing Wu, Guo Chen, Sijia Dang, Yixi Zhuang, Ziquan Guo,Yijun Lu, Qijin Cheng, Chao Chen, Journal Of Alloys And Compounds, 2016, 663: 332-339(SCI:DC2QB/EI: 20160101763260)

15.Temperature dependent carrier localization in AlGaInN near-ultraviolet light-emitting diodesHongwei Wang, Yue Lin, Lihong Zhu, Yijun Lu, Yi Tu, Zhuguang Liu, Zhonghua Deng, Wenchao Tang, Yulin Gao, Zhong ChenOptics Express, 2016, 24(11): 11594-11600 (SCI:DO0KM/EI: 20162402499827)

16.Red-Phosphor-Dot-Doped Array in Mirror-Surface Substrate Light-Emitting Diodes, Hua Xiao, Yijun Lu, Chufen Chai, Yangxia Wang, Tien-mo Shih, Zhong Chen, Journal of Display Technology, 2016, 12(8): 873-877(SCI:DR6RA/EI: 20162902603067)

17.Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes, Yue Lin, Zhangbao Peng, Lihong Zhu*, Wei Yan, Tien-mo Shih, Tingzhu Wu, Yijun Lu*, Yulin Gao, Zhong Chen, Ziquan Guo, Zhuguang Liu, Applied Physics Express, 2016, 9(9): 092101(SCI:DW9MI/EI: 20163802816413)

18.Multi-function indoor light sources based on light-emitting diodes-a solution for healthy lighting, Tingzhu Wu, Yue Lin, Honghui Zhu, Ziquan Guo, Lili Zheng, Yijun Lu*, Tien-mo Shih, Zhong Chen, Optics Express, 2016, 24(21):24401(SCI:EC8NR/EI: 20164402964410 )

19.Spectral Optimization of Candle-Like White Light-Emitting Diodes With High Color Rendering Index and Luminous Efficacy, Ziquan Guo, Hongli Lu, Tienmo Shih, Yue Lin, Yijun Lu, Zhong Chen, Journal Of Display Technology, 2016, 12(11): 1393-1397(SCI: EA0DW/EI: 20164603019179)

20.Spectral Optimization of three-primary LEDs by considering the circadian action factor, Li-Li Zheng, Ting-Zhu Wu, Yi-Jun Lu, Yu-lin Gao, Ya-Jun Wang, Li-Hong Zhu, Zi-Quan Guo, Zhong Chen, IEEE Photonics Journal, 2016, 8(6):8200209(SCI: ED5UG/EI: 20170703345630)


22.Blue-emitting SrB2O4:Eu2+ phosphor with high color purity for near-UV white light-emitting diodesJianghui ZhengLili YingQijin ChengZiquan GuoLihan CaiYijun LuChao ChenMaterials Research Bulletin20156451–54 (SCI: CB8KQ/EI: 20145300383351)

23.Structure, electronic properties, luminescence and chromaticity investigations of rare earth doped KMgBO3 phosphorsJianghui Zheng, Qijin Cheng, Shunqing Wu, Yixi Zhuang, Ziquan Guo, Yijun Lu, Chao ChenMaterials Chemistry and Physics, 2015, 165:168-176 (SCI: CU8UB/EI: 20153801296024)

24.An efficient blue-emitting Sr5(PO4)3Cl:Eu2+ phosphor for the application in near-UV white light-emitting diodes, Jianghui Zheng, Qijin Cheng, Shunqing Wu, Ziquan Guo, Yixi Zhuang, Yijun Lu , Ye Li and Chao Chen, Journal of Materials Chemistry C, 2015, 3(42):11219-11227 (SCI: CU6SG/EI: 20154401467227)

25.Improvements on Optical and Chromatic Uniformities of Light-Emitting Diodes With Microscale-Roughness-Controlled SurfacesHua XiaoYi-Jun LuZi-Quan GuoYue LinTien-Mo Shih and Zhong ChenIEEE Photonics Journal2015,7(4)1600908 (SCI: CR1FL/EI: 20153501213065)

26.Defects dynamics during ageing cycles of InGaN blue light-emitting diodes revealed by evolution of external quantum efficiency – current dependence, Yue Lin, Yong Zhang, Ziquan Guo, Jihong Zhang, Weilin Huang, Yi-Jun Lu, Zhonghua Deng, Zhuguang Liu, and Yongge Cao, Optics Express, 2015, 23(15): 24178 (SCI:CR0TE/EI: 20160401851130)

27.Improvements on remote diffuser-phosphor-packaged light-emitting diode systems, Hua Xiao, Yijun Lu, Tienmo Shih, Lihong Zhu, Siqi Lin, Patrick J. Pagni, Zhong Chen, IEEE Photonics Journal, 2014, 6(2):8200108(SCI: AH5YC )

28.Study on the correlations between color rendering indices and the spectral power distributionYue LinZhonghua DengZiquan GuoZhuguang LiuHai LanYijun Luand Yongge CaoOptics Express201422(S4)A1029-A1039(SCI:AJ9TN/EI: 20142817922515)



31.传统白光LED与远程荧光粉白光LED的发光性能比较,肖华,吕毅军,徐云鑫,朱丽虹* ,陈国龙,高玉琳,范贤光,薛睿超,发光学报2014351):6672(EI: 20140517253021)

32.远程荧光体白光发光二极管的发光性能,肖华,吕毅军,朱丽虹,王阳夏,陈国龙*, 高玉琳,林思棋,徐云鑫,光子学报201443(05)0523003(EI: 20142617873975)

33.Junction-temperature determination in InGaN Light-Emitting Diodes Using Reverse Current MethodB.Q. Wu, S.Q. Lin, T.M. Shih, Y.L. Gao, Y.J. Lu*, L.H. Zhu, G.L.Chen, Z. ChenIEEE Transactions on Electron Devices, 2013, 60(1): 241-245(SCI: 115ML/EI: 20130215875427)

34.Optimization Studies of Two-Phosphor-Coated White Light-Emitting DiodesZ.Q. Guo, T.M. Shih, Y.L. Gao, Y.J. Lu*, L.H.Zhu, G.L.Chen, Y. Lin, J.H. Zhang, Z. Chen*, IEEE Photonics Journal, 2013, 5(2), 8200112(SCI139IC/EI: 20131216127291)

35.Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells, L.H.Zhu, W. Liu, F.M. Zeng, Y.L. Gao, B.L. Liu*, Y.L. Lu*, Z. Chen, IEEE Photonics Journal, 2013, 5(2), 8200208(SCI139IC/EI: 20131216127301)

36.Studies of scotopic/photopic ratios for color-tunable white light-emitting diodes, Z.Q. Guo, T.M. Shih*, Y.J. Lu, Y.L. Gao, L.H.Zhu, G.L.Chen, J.H. Zhang, S.Q. Lin, Z. Chen*, IEEE Photonics Journal, 2013, 5(4), 6562782(SCI: 231HP/EI: 20133316616633)

37.Thermal analyses of alternating current light-emitting diodesJi-Hong Zhang, Bi-Qing Wu, Tien-Mo Shih, Yi-Jun Lu*, Yu-Lin GaoRichard Ru-Gin Chang, and Zhong Chen*Appl. Phys. Lett.2013103153505(SCI: 236FD/EI: 20134316895490)

38.Determining junction temperature in InGaN light-emitting diodes using low forward currentsSiqi Lin, Tienmo Shih, Yijun Lu, Yulin Gao*, Lihong Zhu, Guolong Chen, Biqing Wu, Ziquan Guo, Jihong Zhang, Xianguang Fan, Richard Rugin Chang, and Zhong Chen*IEEE Transactions on Electron Devices, 2013, 60(11):3775-3779(SCI: 242SV/EI: 20134616972382)

39.Improved quantum efficiency in semipolar(1101) InGaN/GaN qunatum wells grown on GaN prepared by lateral epitaxial overgrowth, Lihong Zhu, Fanming Zeng, Wei Liu, Zhechuan Feng, Baolin Liu, Yijun Lu, Yulin Gao, and Zhong Chen, IEEE Transactions on Electron Devices, 2013, 60(11):3753-3759(SCI: 242SV/EI: 20134616972413)

40.Thermal behavior and infrared properties of vertical-electrode GaN LED, H.T. Chen, Y.L. Gao, Y.J. Lu*, G. L. Chen, Z. Chen,Heat Transfer Engineering, 2012, 33(3): 255-260(EI:20120914803463/SCI IDS : 915GI)

41.Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes, Y. Lin, Y.L. Gao, Y.J. Lu*, L.H. Zhu, Y. Zhang, Z. Chen, Applied Physics Letters, 2012, 100: 202108(1-4)(EI: 20122315103234/SCI IDS: 945HZ)

42.Transient Thermal Resistance Test of Single-Crystal-Silicon Solar Cell, J.H. Zhang, Y.L. Gao, Y.J. Lu*, L.H. Zhu, Z.Q. Guo, G.L. Chen, Z. Chen, IEEE Transactions on Electron Devices, 2012, 59(9): 2345-2349(EI: 20123615389627/SCI: 994BG)

43.Failure Analysis of Electrical-Thermal-Optical Characteristics of LEDs Based on AlGaInP and InGaNGaNH.T. Chen, A. Keppens, P. Hanselaer, Y.J. Lu*, Y.L. Gao, R.R. Zhuang, Z. Chen, Semiconductors, 2012, 46(10): 1310-1315(SCI: 019GA)

44.两种高温老化方式对功率白光LED光热参数的影响,薛浩,陈国龙,吕毅军*,高玉琳,朱丽虹,郭自泉,蔡聪波,陈忠,林岳,光电子激光,201223(5):849-854(EI: 20122615178859)


46.中性色温下两基色、三基色荧光粉转换白光LED的光谱优化, 戴树春,郭自泉,吕毅军*,陈忠,发光学报,201233(8): 873-878(EI: 20123715424267)

47.功率型GaNLED芯片表面温度及亮度分布的物理特性研究,陈焕庭,吕毅军*,高玉琳*,陈忠,庄榕榕,周小方,周海光,物理学报,201261(16)167104(1-6)(SCI: 010IX)

48.功率型LED弧面阵列系统的热特性研究,陈焕庭,周小方,庄勇杰,杨伟艺,高玉琳*,吕毅军,光电子激光,201223(11):2096-2101(EI: 20125015786935)